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  • AMAT Applied Materials 0100-01066 Ionic Testing Component
  • AMAT Applied Materials 0100-01066 Ionic Testing Component
  • AMAT Applied Materials 0100-01066 Ionic Testing Component
AMAT Applied Materials 0100-01066 Ionic Testing Component AMAT Applied Materials 0100-01066 Ionic Testing Component AMAT Applied Materials 0100-01066 Ionic Testing Component

AMAT Applied Materials 0100-01066 Ionic Testing Component

AMAT Applied Materials 0100-01066 Ionic Testing Component

Product Details Introduction

1. Adaptation scenarios and functions (0100-01066)

Equipment adaptation: Matched with AMAT semiconductor plasma process equipment (such as dry etching machine, PECVD deposition machine), used for real-time monitoring of plasma state in vacuum chambers, suitable for etching and thin film deposition processes in 300mm wafer manufacturing.

Process compatibility: Focusing on RF plasma (commonly used frequency bands of 13.56MHz/27.12MHz) detection scenarios, compatible with plasma processing processes of different wafer materials such as silicon, metal, and dielectric, and can be linked with equipment RF power supply and chamber control system.

Core function: Accurate detection of key parameters such as plasma density, electron temperature, and ion energy. When the parameters deviate from the process threshold, an alarm is triggered to ensure the uniformity of etching rate, film deposition quality, and avoid wafer scrap.

2. Accuracy and Performance (0100-01066)

Detection accuracy: Plasma density measurement range is 10 ⁹ -10 ¹² cm ⁻ ³, with an error of ≤± 5%; The electronic temperature measurement range is 0.5-5eV, with an error of ≤± 0.1eV; the ion energy resolution is 0.1eV, which can capture small fluctuations in plasma parameters.

Response performance: Parameter sampling frequency ≥ 10Hz, data output delay ≤ 100ms, supports "real-time monitoring+historical data storage" dual-mode, storage capacity can record process parameters for ≥ 72 hours, facilitating process traceability and anomaly analysis.

Signal compatibility: Supports Ethernet (100Mbps), RS-485 digital signal output, and can be connected to AMAT equipment PLC system and SmartFactory yield management platform to achieve remote monitoring of plasma parameters and process formulation optimization.

3. Structure and Protection (0100-01066)

Protection design: The detection probe adopts an aluminum oxide ceramic insulation shell (with a plasma corrosion resistance life of ≥ 5000 hours), and the probe surface is treated with Y ₂ O3 coating; The main module has a protection level of IP65, which is dust-proof and workshop cleaning splash proof. The internal circuit is designed to resist electromagnetic interference (EMI).

Installation adaptation: Adopting flange installation (compatible with DN40/DN50 standard vacuum flanges), it can be directly embedded into the chamber side wall, and the probe can be inserted into the depth adjustable (0-50mm) to adapt to the plasma distribution area of different sizes of chambers; The wiring terminal is designed with vacuum sealing (leakage rate ≤ 1 × 10 ⁻⁹ Pa · m ³/s).

Easy to operate: equipped with a 2.0-inch LCD display screen, real-time display of plasma core parameters and module working status; Support local calibration of probes through physical buttons, and remote firmware updates through dedicated software without disassembling the chamber.

AMAT Applied Materials  0100-01066   Product imag

0100-01066_icp_enhanced_plasma_detect_assy_pcb_applied_materials_amat.jpg

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