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  • AMAT Applied Materials 0100-01652 Gas Panel
  • AMAT Applied Materials 0100-01652 Gas Panel
  • AMAT Applied Materials 0100-01652 Gas Panel
AMAT Applied Materials 0100-01652 Gas Panel AMAT Applied Materials 0100-01652 Gas Panel AMAT Applied Materials 0100-01652 Gas Panel

AMAT Applied Materials 0100-01652 Gas Panel

AMAT Applied Materials 0100-01652 Gas Panel

Product Details Introduction

AMAT Applied Materials 0100-01652 Gas Panel

Product Overview

0100-01652 is a gas panel module used in AMAT semiconductor process equipment. As a key subsystem for gas delivery and control, it is used to stably and safely deliver various high-purity gases required for the process (such as SiH ₄, NH ∝, N ₂, Ar, etc.) to the vacuum reaction chamber at the set flow rate and pressure.

Technical functions and features

Gas flow control

Integrated Mass Flow Controller (MFC) to precisely regulate the flow rate of each process gas.

Support multi-channel gas distribution to meet the requirements of complex process formulas.

Gas path switching and allocation

Gas switching and path switching are achieved through solenoid valves, diaphragm valves, etc.

Designed to prevent cross contamination of gases.

Pressure and purity assurance

Equipped with pressure sensors and regulating valves to ensure that gas enters the process chamber at an appropriate pressure.

The pipelines and valves are made of stainless steel or high-purity materials to ensure gas purity and avoid particles or impurities.

Security and Interlocking

Equipped with gas leak detection and automatic shut-off mechanism.

Interlock with the overall control system and automatically close the air circuit in case of abnormal conditions.

Application field

Chemical Vapor Deposition (CVD) Equipment

Used to control the ratio and flow rate of precursor gas and reaction gas, achieving thin film deposition (such as SiO ₂, Si ∝ N ₄, metal oxides, etc.).

Physical Vapor Deposition (PVD) equipment

In the sputtering process, introducing working gas (such as Ar) or reactive gas (such as O ₂, N ₂) controls the deposition characteristics.

Etch etching equipment

Accurately mix CF ₄, CHF ∝, Cl ₂ and other gases to adjust the etching rate and selectivity.

Cleaning and surface treatment equipment

Transport gases such as O ₂ and H ₂ for plasma cleaning or surface activation treatment.

AMAT Applied Materials 0100-01652 Gas Panel Product imag

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