MKS FI20620-1 Remote Plasma Source

MKS FI20620-1 Remote Plasma Source 

 Introduction

MKS FI20620-1 belongs to Astron2L remote plasma source, which generates active free radicals for semiconductor cavity cleaning and process processing.

Application areas

1. Dry cleaning of semiconductor CVD process chamber

2. Removal of sediment from etching equipment chamber

3. Plasma ashing and stripping of photoresist

4. Compound semiconductor wafer processing technology

5. Maintenance and cleaning of the chamber of the thin film deposition equipment

6. Surface modification treatment of low-k dielectric materials

7. Advanced chip packaging cavity purification

8. Cleaning of photovoltaic thin film deposition equipment chamber

9. Plasma dissociation treatment of process exhaust gas

10. Free radical supply for nitrogen oxidation process

Product Parameters

1. RF excitation, power 3000W, gas dissociation efficiency higher than 95%

2. Compatible with multiple process gases including NF3, O2, N2, and H2

3. Water cooling and heat dissipation, supporting long-term continuous production operation

4. Equipped with EtherCAT and analog I/O industrial communication interface

5. Quartz cavity structure with minimal particle generation, suitable for clean processes

Overall, the MKS FI20620-1 remote plasma source has stable performance and high dissociation efficiency, making it a key component for cleaning semiconductor thin film equipment cavities

Product imag

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