ENI 0190-08279 plasma generator

ENI 0190-08279 plasma generator 

 Introduction

ENI 0190-08279 plasma generator

Product Features:

1. Stable output RF power, fast plasma arc initiation, and reduced process start-up fluctuations

2. Built in multiple protection circuits, automatic shutdown protection for overcurrent, overheating, and high reflected power

3. Support continuous adjustable power to meet the plasma requirements of different etching and deposition processes

4. Metal shielded chassis effectively suppresses RF leakage and reduces electromagnetic interference to surrounding boards

5. Standardized interface layout, easy on-site disassembly and replacement, and no need to modify the wiring of the AMAT machine

Product Parameters:

1. Material model: 0190-08279

2. RF frequency: 13.56MHz

3. Maximum output power: 1500W

4. Communication method: Analog signal+machine bus communication

5. Compatible equipment: AMAT semiconductor plasma process machine

Application fields:

1. Plasma excitation in semiconductor dry etching chamber

2. RF plasma supply for thin film deposition process

3. Plasma cleaning process for wafer surface

4. Energy closed-loop control of plasma process

5. Replacement and maintenance of spare parts for AMAT equipment RF power supply

This ENI 0190-08279 plasma generator is equipped with an AMAT machine's RF power supply, providing stable plasma energy to the cavity and ensuring wafer process repeatability. By checking the model, it can be quickly replaced on the machine.

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