ENI GHW12Z-13DF2N0-001 RF Generator

ENI GHW12Z-13DF2N0-001 RF Generator 

 Introduction

ENI GHW12Z-13DF2N0-001 RF generator, GHW series 13.56MHz solid-state RF power supply, compatible with AMAT semiconductor machine plasma process.

Product Features:

1. Ultra fast mismatch protection response, quickly limiting output when load reflection power suddenly increases, protecting the cavity and target material

2. High precision power regulation, stable plasma state, ensuring repeatability of thin film process

3. Low stray RF output, reducing interference with sensor signals around the machine

4. 19 inch standard rack structure, convenient for integrated installation, disassembly and maintenance of cabinets

5. Improve internal self inspection, automatic diagnosis upon startup, and shorten troubleshooting time

Product Parameters:

6. Model: GHW12Z-13DF2N0-001

7. Operating frequency: 13.56MHz

8. Rated output power: 1250W

9. Communication interface: RS232 serial port

10. RF interface: N-type RF connector

Application fields:

11. PECVD plasma enhanced chemical vapor deposition power supply

12. HDPCVD high-density plasma thin film process

13. Semiconductor dielectric layer etching equipment RF source

14. Preparation process of flat panel display film

15. Replacement of spare parts for AMAT GHW series RF power supply

Replacement of spare parts for plasma thin film equipment, ENI GHW12Z-13DF2N0-001 RF generator can be directly matched with the original equipment circuit.

Product imag

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