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  • Daihen 2L39-000145-12 RF Power Generator
  • Daihen 2L39-000145-12 RF Power Generator
  • Daihen 2L39-000145-12 RF Power Generator
Daihen 2L39-000145-12 RF Power Generator Daihen 2L39-000145-12 RF Power Generator Daihen 2L39-000145-12 RF Power Generator

Daihen 2L39-000145-12 RF Power Generator

Daihen 2L39-000145-12 RF Power Generator 

 Introduction

Daihen 2L39-000145-12 is a Daheng RF power generator, the RF main power supply for semiconductor plasma technology, which outputs stable RF energy.

1. High power output accuracy, small fluctuations, ensuring uniform and stable plasma;

2. Support pulse modulation function, adjustable duty cycle to adapt to fine processes;

3. Built in reverse power protection, automatically reduces power when the cavity is abnormal, protecting the host;

4. The communication interface is complete and can be linked with the matching box and equipment master control;

5. The whole machine has reliable heat dissipation and is suitable for mass production machines to operate continuously for a long time.

1. Operating frequency 13.56MHz;

2. Rated output power of 3000W;

3. Standard output impedance of 50 Ω;

4. Maximum withstand reflection power of 600W;

5. The power supply is single-phase AC200V.

1. RF power supply for semiconductor plasma etching process;

2. Power supply for PVD magnetron sputtering thin film deposition;

3. CVD plasma chemical vapor deposition;

4. Plasma surface cleaning treatment for wafers;

5. Various semiconductor plasma process cavity RF sources.

This 2L39-000145-12 has stable output and complete protection mechanism, and is a commonly used RF generator in many second-hand semiconductor devices.

Product imag

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PMB31B-20216-0370 FA 01b3ASD573001A13 YPK112A
PMB31B-20216-02IIMCL0157120001-KH DSTA 156
PMB31B-20216-0170 BL 02CR32GENC-TS-NS-VS-00
PMB31B-20216-00AMAT 0100-0913657160001-P DSTD 120
PMB31B-20214-0307YS81R32HSNG-TS-NS-NV-02
PMB31B-20214-02Amat 0100-0283957160001-TK DSDI 141A


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