GENESISGHW55A-13DF4L0 RF Generator

GENESISGHW55A-13DF4L0 RF Generator 

Product Details Introduction

GENESIS GHW55A-3DF4L0 (MKS/ENI) 5500W RF Generator

The whole machine is a specialized 13.56MHz high-power plasma RF power supply for semiconductor equipment, suitable for etching and PECVD thin film process chamber power supply.

1. Rated output power of 5500W, fixed main frequency of 13.56MHz, frequency accuracy of ± 0.005%.

2. Input voltage 200-208V three-phase industrial electricity, rated input current 38A, 50/60Hz universal power frequency.

3. All solid state power architecture, power steady-state error ≤ ± 0.5%, and fast closed-loop power stabilization during sudden changes in cavity load.

4. Excellent standing wave tolerance, continuous operation under high reflection loads, noise suppression<-45dBc, harmonic distortion<-40dBc.

5. N-type RF output interface, standard RS232 serial communication, supports remote power control and status reading from the upper computer.

6. Built in multiple protections: over temperature, over current, over standing wave, output short circuit, automatic lock alarm for abnormal situations, and protection against chamber damage.

7. Integrated air duct for air cooling and heat dissipation, with controllable temperature rise during long-term operation at full load, suitable for dust-free semiconductor machine room conditions.

8. The digital phase-locked DPLL circuit ensures stable RF signals without frequency hopping even when the impedance undergoes sudden changes during cavity startup.

9. Rack standard size, installed in a 19 inch cabinet, with snap fasteners for easy disassembly and replacement.

10. Real time collection of output power, reflected power, and internal temperature data, with panel fault indicator light zoning alarms.

11. DF4L0 customized interface configuration, matching TEL and AMAT original factory coating/etching equipment main control wiring definitions.

12. Anti RF interference PCB process, the high-frequency plasma environment in the cavity is not easily affected by electromagnetic noise interference.

13. The power is continuously linearly adjustable from 0 to 5500W, suitable for different process parameter switching requirements.

14. Durable components from the original factory, standard spare parts for continuous production on wafer production lines 7 × 24 hours a day, with strong versatility for disassembly and replacement.

15. Commonly used in semiconductor etching, PVD/PECVD coating, and plasma excitation stations for panel manufacturing.

GHW55A-13DF4L0 is a mainstream replacement spare for high-power RF in semiconductor equipment.

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